P4KE30HB0
vs
P4KE30
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
DIGITRON SEMICONDUCTORS
Package Description
O-PALF-W2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max
33 V
33 V
Breakdown Voltage-Min
27 V
27 V
Breakdown Voltage-Nom
30 V
30 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
43.5 V
43.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-204AL
DO-41
JESD-30 Code
O-PALF-W2
O-XALF-W2
JESD-609 Code
e3
e0
Non-rep Peak Rev Power Dis-Max
400 W
400 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1.13 W
Reference Standard
AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
24.3 V
24.3 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
54
Forward Voltage-Max (VF)
3.5 V
Reverse Current-Max
1 µA
Reverse Test Voltage
24.3 V
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