P4KE11AR1G vs P4KE11A feature comparison

P4KE11AR1G Taiwan Semiconductor

Buy Now Datasheet

P4KE11A TDK Micronas GmbH

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD ITT SEMICONDUCTOR
Package Description O-PALF-W2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 11.6 V 11.6 V
Breakdown Voltage-Min 10.5 V 10.5 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-204AL
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 9.4 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 56
Breakdown Voltage-Nom 11 V
Clamping Voltage-Max 15.6 V
Qualification Status Not Qualified
Reverse Current-Max 5 µA

Compare P4KE11AR1G with alternatives

Compare P4KE11A with alternatives