P4KE11A vs P4KE11AHB0 feature comparison

P4KE11A TDK Micronas GmbH

Buy Now Datasheet

P4KE11AHB0 Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ITT SEMICONDUCTOR TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 11.6 V 11.6 V
Breakdown Voltage-Min 10.5 V 10.5 V
Breakdown Voltage-Nom 11 V 11 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 15.6 V 15.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 56 1
Rohs Code Yes
Package Description O-PALF-W2
Additional Feature EXCELLENT CLAMPING CAPABILITY
JEDEC-95 Code DO-204AL
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 400 W
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 1 W
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 9.4 V
Terminal Finish MATTE TIN

Compare P4KE11A with alternatives

Compare P4KE11AHB0 with alternatives