NVMFS5C430NWFAFT1G
vs
NVMFS5C430NWFT1G
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ONSEMI
ONSEMI
Part Package Code
DFNW5 4.90x5.90x1.00, 1.27P
DFNW5 4.90x5.90x1.00, 1.27P
Manufacturer Package Code
507BE
507BE
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
16 Weeks
Date Of Intro
2017-02-24
Samacsys Manufacturer
onsemi
onsemi
Avalanche Energy Rating (Eas)
338 mJ
338 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
40 V
Drain Current-Max (ID)
185 A
185 A
Drain-source On Resistance-Max
0.0017 Ω
0.0017 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
45 pF
45 pF
JESD-30 Code
R-PDSO-F6
R-PDSO-F6
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
6
6
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
106 W
106 W
Pulsed Drain Current-Max (IDM)
900 A
900 A
Reference Standard
AEC-Q101
AEC-Q101
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn) - annealed
Matte Tin (Sn) - annealed
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Compare NVMFS5C430NWFAFT1G with alternatives
Compare NVMFS5C430NWFT1G with alternatives