NVMFS5C430NWFT1G
vs
NVMFS5C430NAFT1G
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
ONSEMI
ONSEMI
Part Package Code
DFNW5 4.90x5.90x1.00, 1.27P
SO-8FL / DFN-5
Manufacturer Package Code
507BE
488AA
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Samacsys Description
Single N-Channel Power MOSFET 40V, 185A, 1.7mΩ Power MOSFET 40V, 185A, 1.7 mOhm, Single N-Channel, SO8-FL. 1500 / Tape & Reel. Pb-Free, Wettable Flanks
Single N-Channel Power MOSFET 40V, 185A, 1.7mΩ Power MOSFET 40V, 185A, 1.7 mOhm, Single N-Channel, SO8-FL. 1500 / Tape & Reel
Samacsys Manufacturer
onsemi
onsemi
Samacsys Modified On
2024-09-19 14:45:22
2024-09-19 14:45:22
Total Weight
100.83
100.83
Category CO2 Kg
8.8
8.8
CO2
887.3040000000001
887.3040000000001
Compliance Temperature Grade
Military: -55C to +175C
Military: -55C to +175C
EU RoHS Version
RoHS 2 (2015/863/EU)
RoHS 2 (2015/863/EU)
EU RoHS Exemptions
7(a)
7(a)
Candidate List Date
2024-01-23
2024-01-23
SVHC Over MCV
7439-92-1
7439-92-1
CAS Accounted for Wt
96
96
CA Prop 65 Presence
YES
YES
CA Prop 65 CAS Numbers
1333-86-4, 7439-92-1
1333-86-4, 7439-92-1
EFUP
50
50
Conflict Mineral Status
DRC Conflict Free
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.31
CMRT V6.31
Qualifications
AEC-Q101
AEC-Q101
Avalanche Energy Rating (Eas)
338 mJ
338 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
40 V
Drain Current-Max (ID)
185 A
185 A
Drain-source On Resistance-Max
0.0017 Ω
0.0017 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
45 pF
45 pF
JESD-30 Code
R-PDSO-F6
R-PDSO-F6
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
6
6
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
106 W
106 W
Pulsed Drain Current-Max (IDM)
900 A
900 A
Reference Standard
AEC-Q101
AEC-Q101
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn) - annealed
Matte Tin (Sn) - annealed
Terminal Form
FLAT
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
16 Weeks
Date Of Intro
2017-02-24
Compare NVMFS5C430NWFT1G with alternatives
Compare NVMFS5C430NAFT1G with alternatives