NVMFS5C404NLAFT1G
vs
NVMFS5C404NWFT1G
feature comparison
Pbfree Code |
Yes
|
|
Part Life Cycle Code |
Active
|
|
Ihs Manufacturer |
ONSEMI
|
|
Package Description |
SO-8FL, DFN5, 6 PIN
|
|
Manufacturer Package Code |
506EZ
|
|
Reach Compliance Code |
not_compliant
|
|
ECCN Code |
EAR99
|
|
Factory Lead Time |
62 Weeks
|
|
Date Of Intro |
2017-02-24
|
|
Samacsys Manufacturer |
onsemi
|
|
Avalanche Energy Rating (Eas) |
907 mJ
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
40 V
|
|
Drain Current-Max (ID) |
370 A
|
|
Drain-source On Resistance-Max |
0.001 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss) |
79.8 pF
|
|
JESD-30 Code |
R-PDSO-F5
|
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
|
Number of Terminals |
5
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
|
Power Dissipation-Max (Abs) |
200 W
|
|
Pulsed Drain Current-Max (IDM) |
900 A
|
|
Reference Standard |
AEC-Q101
|
|
Surface Mount |
YES
|
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
|
Terminal Form |
FLAT
|
|
Terminal Position |
DUAL
|
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
1
|
|
|
|
|
Compare NVMFS5C404NLAFT1G with alternatives