NVB6410ANT4G
vs
HUF75645P3
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
ON SEMICONDUCTOR
ONSEMI
Part Package Code
D2PAK 2 LEAD
TO-220-3
Package Description
D2PAK-3/2
Pin Count
3
Manufacturer Package Code
418B-04
340AT
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
onsemi
onsemi
Avalanche Energy Rating (Eas)
500 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
76 A
75 A
Drain-source On Resistance-Max
0.013 Ω
0.014 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
188 W
310 W
Pulsed Drain Current-Max (IDM)
305 A
Reference Standard
AEC-Q101
Surface Mount
YES
NO
Terminal Finish
Tin (Sn)
MATTE TIN
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Factory Lead Time
9 Weeks, 1 Day
JEDEC-95 Code
TO-220AB
Qualification Status
Not Qualified
Transistor Application
SWITCHING
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