NVB6410ANT4G vs APT10M19SVFRG feature comparison

NVB6410ANT4G onsemi

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APT10M19SVFRG Microchip Technology Inc

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Pbfree Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ON SEMICONDUCTOR MICROCHIP TECHNOLOGY INC
Part Package Code D2PAK 2 LEAD
Package Description D2PAK-3/2 D3PAK-3
Pin Count 3
Manufacturer Package Code 418B-04
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 500 mJ 1500 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 76 A 75 A
Drain-source On Resistance-Max 0.013 Ω 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 188 W
Pulsed Drain Current-Max (IDM) 305 A 300 A
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Finish Tin (Sn) Pure Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Factory Lead Time 32 Weeks
Additional Feature AVALANCHE RATED
Qualification Status Not Qualified
Transistor Application SWITCHING

Compare NVB6410ANT4G with alternatives

Compare APT10M19SVFRG with alternatives