NTMD2C02R2SG
vs
MMDF2C03HDR2
feature comparison
Pbfree Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
MOTOROLA INC
|
Part Package Code |
SOT
|
|
Package Description |
LEAD FREE, CASE 751-07, SOIC-8
|
SO-8
|
Pin Count |
8
|
|
Manufacturer Package Code |
CASE 751-07
|
|
Reach Compliance Code |
unknown
|
unknown
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS
|
DS Breakdown Voltage-Min |
20 V
|
30 V
|
Drain Current-Max (ID) |
5.2 A
|
2 A
|
Drain-source On Resistance-Max |
0.043 Ω
|
0.09 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
3
|
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL AND P-CHANNEL
|
N-CHANNEL AND P-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
48 A
|
21 A
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
40
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
4
|
Rohs Code |
|
No
|
ECCN Code |
|
EAR99
|
Avalanche Energy Rating (Eas) |
|
324 mJ
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
2 W
|
|
|
|
Compare NTMD2C02R2SG with alternatives