NTLJS4114NT1G
vs
NTLJS4159NT1G
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
ONSEMI
|
ROCHESTER ELECTRONICS LLC
|
| Part Package Code |
WDFN6, 2 x 2 x 0.75 mm, 0.65 mm Pitch
|
DFN
|
| Package Description |
WDFN6, 6 PIN
|
2 X 2 MM, LEAD FREE, CASE 506AP-01, WDFN6, 6 PIN
|
| Pin Count |
6
|
6
|
| Manufacturer Package Code |
506AP
|
CASE 506AP-01
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| Factory Lead Time |
55 Weeks, 2 Days
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE
|
LOGIC LEVEL COMPATIBLE
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
3.6 A
|
3.6 A
|
| Drain-source On Resistance-Max |
0.045 Ω
|
0.045 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
S-XDSO-C6
|
S-XDSO-C6
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
NOT SPECIFIED
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
6
|
6
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
3.3 W
|
|
| Pulsed Drain Current-Max (IDM) |
28 A
|
28 A
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
C BEND
|
C BEND
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
40
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
|
|
|