NTE642 vs ES2BFSHM2G feature comparison

NTE642 NTE Electronics Inc

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ES2BFSHM2G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer NTE ELECTRONICS INC TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-C2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer NTE ELECTRONICS
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS, SNUBBER DIODE
Application FAST RECOVERY EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.85 V 0.95 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-F2
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 2 A 2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 500 µA 1 µA
Surface Mount YES YES
Technology SCHOTTKY
Terminal Form C BEND FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
JESD-609 Code e3
Moisture Sensitivity Level 1
Reference Standard AEC-Q101
Reverse Recovery Time-Max 0.035 µs
Terminal Finish MATTE TIN

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Compare ES2BFSHM2G with alternatives