NTE350F
vs
BLY91C/01
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NTE ELECTRONICS INC
|
NXP SEMICONDUCTORS
|
| Package Description |
FLANGE MOUNT, O-CRFM-F4
|
DISK BUTTON, O-CRDB-F4
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
|
| Collector Current-Max (IC) |
2.5 A
|
0.75 A
|
| Collector-Emitter Voltage-Max |
18 V
|
36 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
5
|
5
|
| Highest Frequency Band |
VERY HIGH FREQUENCY BAND
|
VERY HIGH FREQUENCY BAND
|
| JESD-30 Code |
O-CRFM-F4
|
O-CRDB-F4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
DISK BUTTON
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
31 W
|
|
| Power Dissipation-Max (Abs) |
31 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
RADIAL
|
RADIAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Collector-Base Capacitance-Max |
|
15 pF
|
| Operating Temperature-Max |
|
200 °C
|
| Power Gain-Min (Gp) |
|
12 dB
|
| Transition Frequency-Nom (fT) |
|
500 MHz
|
|
|
|
Compare NTE350F with alternatives
Compare BLY91C/01 with alternatives