NTE2395
vs
IRFN054PBF
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
NTE ELECTRONICS INC
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
SMALL OUTLINE, R-CDSO-N3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
NTE ELECTRONICS
|
Infineon
|
| Avalanche Energy Rating (Eas) |
100 mJ
|
480 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
60 V
|
60 V
|
| Drain Current-Max (ID) |
50 A
|
55 A
|
| Drain-source On Resistance-Max |
0.028 Ω
|
0.031 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSFM-T3
|
R-CDSO-N3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
150 W
|
|
| Pulsed Drain Current-Max (IDM) |
200 A
|
256 A
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
NO LEAD
|
| Terminal Position |
SINGLE
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Operating Temperature-Max |
|
150 °C
|
|
|
|
Compare NTE2395 with alternatives
Compare IRFN054PBF with alternatives