Part Details for NTE2395 by NTE Electronics Inc
Overview of NTE2395 by NTE Electronics Inc
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NTE2395
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2368-NTE2395-ND
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DigiKey | MOSFET N-CHANNEL 60V 50A TO220 Min Qty: 1 Lead time: 1 Weeks Container: Bag MARKETPLACE PRODUCT |
612 In Stock |
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$4.5400 / $5.4700 | Buy Now |
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Bristol Electronics | Min Qty: 1 | 4 |
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$6.7200 | Buy Now |
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Bristol Electronics | 1 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 26 |
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$5.1075 / $10.2150 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1 |
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$7.8540 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 60V, 0.028OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 3 |
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$6.0000 / $9.0000 | Buy Now |
DISTI #
NTE2395
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TME | Transistor: N-MOSFET, unipolar, 60V, 36A, Idm: 200A, 150W, TO220 Min Qty: 1 | 0 |
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$4.4700 / $6.2600 | RFQ |
Part Details for NTE2395
NTE2395 CAD Models
NTE2395 Part Data Attributes
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NTE2395
NTE Electronics Inc
Buy Now
Datasheet
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Compare Parts:
NTE2395
NTE Electronics Inc
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NTE ELECTRONICS INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | NTE ELECTRONICS | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for NTE2395
This table gives cross-reference parts and alternative options found for NTE2395. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE2395, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFN054PBF | Power Field-Effect Transistor, 55A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | NTE2395 vs IRFN054PBF |
IRFN054R4 | Power Field-Effect Transistor, 45A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-220SM, 3 PIN | TT Electronics Resistors | NTE2395 vs IRFN054R4 |
IRFN054SCX | Power Field-Effect Transistor, 55A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | NTE2395 vs IRFN054SCX |
IRFN054 | Power Field-Effect Transistor, 55A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | NTE2395 vs IRFN054 |