NTD4857N-1G
vs
NTD4809NH-1G
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
ONSEMI
Package Description
LEAD FREE, CASE 369D-01, IPAK-3
ROHS COMPLIANT, CASE 369D-01, IPAK-3
Pin Count
3
4
Manufacturer Package Code
CASE 369D-01
369
Reach Compliance Code
unknown
not_compliant
Avalanche Energy Rating (Eas)
144.5 mJ
112.5 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
25 V
30 V
Drain Current-Max (ID)
12 A
9 A
Drain-source On Resistance-Max
0.008 Ω
0.0125 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
R-PSIP-T3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
NOT SPECIFIED
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
156 A
130 A
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN
TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Part Package Code
DPAK INSERTION MOUNT
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
onsemi
Operating Temperature-Max
175 °C
Power Dissipation-Max (Abs)
52 W
Compare NTD4857N-1G with alternatives
Compare NTD4809NH-1G with alternatives