NTD4857N-1G vs NTD4810NH-1G feature comparison

NTD4857N-1G Rochester Electronics LLC

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NTD4810NH-1G Rochester Electronics LLC

Buy Now Datasheet
Pbfree Code Yes No
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ROCHESTER ELECTRONICS LLC
Package Description LEAD FREE, CASE 369D-01, IPAK-3 IPAK, CASE 369AC, 3 PIN
Pin Count 3 3
Manufacturer Package Code CASE 369D-01 CASE 369AC
Reach Compliance Code unknown unknown
Avalanche Energy Rating (Eas) 144.5 mJ 66 mJ
Case Connection DRAIN ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V 30 V
Drain Current-Max (ID) 12 A 10.8 A
Drain-source On Resistance-Max 0.008 Ω 0.0167 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level NOT SPECIFIED NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED 265
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 156 A 120 A
Qualification Status COMMERCIAL COMMERCIAL
Surface Mount NO NO
Terminal Finish TIN MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2

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Compare NTD4810NH-1G with alternatives