NTD3055L170-1
vs
HUFA76419D3ST
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
ON SEMICONDUCTOR
INTERSIL CORP
Package Description
CASE 369D-01, DPAK-3
Pin Count
3
Manufacturer Package Code
CASE 369D-01
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
30 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
9 A
20 A
Drain-source On Resistance-Max
0.17 Ω
0.043 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
1.5 W
Pulsed Drain Current-Max (IDM)
27 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
4
JEDEC-95 Code
TO-252AA
Compare NTD3055L170-1 with alternatives
Compare HUFA76419D3ST with alternatives