NTD20N06LT4
vs
HUF75329D3S
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
INTERSIL CORP
Package Description
CASE 369C-01, DPAK-3
Pin Count
3
Manufacturer Package Code
CASE 369C-01
Reach Compliance Code
unknown
not_compliant
Avalanche Energy Rating (Eas)
128 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
55 V
Drain Current-Max (ID)
20 A
20 A
Drain-source On Resistance-Max
0.048 Ω
0.026 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e0
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
240
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
60 A
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
4
ECCN Code
EAR99
JEDEC-95 Code
TO-252AA
Operating Temperature-Max
175 °C
Power Dissipation-Max (Abs)
70 W
Compare NTD20N06LT4 with alternatives
Compare HUF75329D3S with alternatives