NT256D64S8HA0G-75B
vs
M470L3224BT0-LA2
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NANYA TECHNOLOGY CORP
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
DIMM
|
MODULE
|
| Package Description |
,
|
,
|
| Pin Count |
184
|
200
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.36
|
8542.32.00.36
|
| Access Mode |
DUAL BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
| Access Time-Max |
0.75 ns
|
0.75 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| JESD-30 Code |
R-XDMA-N184
|
R-XDMA-N200
|
| Memory Density |
2147483648 bit
|
2147483648 bit
|
| Memory IC Type |
DDR DRAM MODULE
|
DDR DRAM MODULE
|
| Memory Width |
64
|
64
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
184
|
200
|
| Number of Words |
33554432 words
|
33554432 words
|
| Number of Words Code |
32000000
|
32000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
32MX64
|
32MX64
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Self Refresh |
YES
|
YES
|
| Supply Voltage-Max (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Min (Vsup) |
2.3 V
|
2.3 V
|
| Supply Voltage-Nom (Vsup) |
2.5 V
|
2.5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| Moisture Sensitivity Level |
|
1
|
|
|
|
Compare NT256D64S8HA0G-75B with alternatives
Compare M470L3224BT0-LA2 with alternatives