NT1GD64S8HB0G-5T vs M368L2923CUN-LB0 feature comparison

NT1GD64S8HB0G-5T Nanya Technology Corporation

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M368L2923CUN-LB0 Samsung Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NANYA TECHNOLOGY CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM DIMM
Package Description DIMM, DIMM184 DIMM, DIMM184
Pin Count 184 184
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode DUAL BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.7 ns 0.75 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz 133 MHz
I/O Type COMMON COMMON
JESD-30 Code R-XDMA-N184 R-XDMA-N184
Memory Density 8589934592 bit 8589934592 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 184 184
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 128MX64 128MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM184 DIMM184
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Self Refresh YES YES
Standby Current-Max 0.06 A 0.08 A
Supply Current-Max 5.863 mA 2.96 mA
Supply Voltage-Max (Vsup) 2.7 V 2.7 V
Supply Voltage-Min (Vsup) 2.5 V 2.3 V
Supply Voltage-Nom (Vsup) 2.6 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare NT1GD64S8HB0G-5T with alternatives

Compare M368L2923CUN-LB0 with alternatives