Datasheets
M368L2923CUN-LB0 by: Samsung Semiconductor

DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184

Part Details for M368L2923CUN-LB0 by Samsung Semiconductor

Overview of M368L2923CUN-LB0 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Part Details for M368L2923CUN-LB0

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M368L2923CUN-LB0 Part Data Attributes

M368L2923CUN-LB0 Samsung Semiconductor
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M368L2923CUN-LB0 Samsung Semiconductor DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code DIMM
Package Description DIMM, DIMM184
Pin Count 184
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.75 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N184
Memory Density 8589934592 bit
Memory IC Type DDR DRAM MODULE
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 184
Number of Words 134217728 words
Number of Words Code 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 128MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM184
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 8192
Self Refresh YES
Standby Current-Max 0.08 A
Supply Current-Max 2.96 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Alternate Parts for M368L2923CUN-LB0

This table gives cross-reference parts and alternative options found for M368L2923CUN-LB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M368L2923CUN-LB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
M368L2923CUN-CA2 DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M368L2923CUN-LB0 vs M368L2923CUN-CA2
M368L2923CUN-CB0 DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M368L2923CUN-LB0 vs M368L2923CUN-CB0
M368L2923BTN-LAA DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M368L2923CUN-LB0 vs M368L2923BTN-LAA
M368L2923CUN-LA2 DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M368L2923CUN-LB0 vs M368L2923CUN-LA2
M368L2923BTN-CB0 DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M368L2923CUN-LB0 vs M368L2923BTN-CB0
M368L2923BTN-CAA DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M368L2923CUN-LB0 vs M368L2923BTN-CAA
Part Number Description Manufacturer Compare
HYMD512646AL8-H DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 SK Hynix Inc M368L2923CUN-LB0 vs HYMD512646AL8-H
M368L2923CUN-CA2 DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 Samsung Semiconductor M368L2923CUN-LB0 vs M368L2923CUN-CA2
M368L2923BTM-CC4 DDR DRAM Module, 128MX64, 0.65ns, CMOS, DIMM-184 Samsung Semiconductor M368L2923CUN-LB0 vs M368L2923BTM-CC4
MT16VDDT12864AG-262XX DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 Micron Technology Inc M368L2923CUN-LB0 vs MT16VDDT12864AG-262XX
EBD11UD8ADFB-7B-E DDR DRAM Module, 128MX64, 0.75ns, CMOS, DIMM-184 Elpida Memory Inc M368L2923CUN-LB0 vs EBD11UD8ADFB-7B-E
VR4CU286428ETP DDR DRAM Module, 128MX64, 0.65ns, CMOS, ROHS COMPLIANT, DIMM-184 Viking Technology M368L2923CUN-LB0 vs VR4CU286428ETP
HYMD512646BP8J-D43 DDR DRAM Module, 128MX64, 0.7ns, CMOS, ROHS COMPLIANT, DIMM-184 SK Hynix Inc M368L2923CUN-LB0 vs HYMD512646BP8J-D43
W3EG64129S202D3 DDR DRAM Module, 128MX64, CMOS, DIMM-184 Microsemi Corporation M368L2923CUN-LB0 vs W3EG64129S202D3
W3EG64128S335D3M DDR DRAM Module, 128MX64, 0.7ns, CMOS, DIMM-184 Microsemi Corporation M368L2923CUN-LB0 vs W3EG64128S335D3M
W3EG64128S262D3MG DDR DRAM Module, 128MX64, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 Microsemi Corporation M368L2923CUN-LB0 vs W3EG64128S262D3MG

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