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NSBC114TDXV6T1 vs PEMD3,115 feature comparison

NSBC114TDXV6T1 Rochester Electronics LLC

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PEMD3,115 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC NXP SEMICONDUCTORS
Package Description LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN PLASTIC PACKAGE-6
Pin Count 6 6
Manufacturer Package Code CASE 463A-01 SOT666
Reach Compliance Code unknown compliant
Additional Feature BUILT IN BIAS RESISTOR BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 160 30
JESD-30 Code R-PDSO-F6 R-PDSO-F6
JESD-609 Code e3 e3
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 2 2
Number of Terminals 6 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN NPN AND PNP
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN TIN
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Part Package Code SOT
ECCN Code EAR99
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.3 W
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

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