NIF62514T3G
vs
NIF62514T1
feature comparison
Pbfree Code |
Yes
|
No
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
ON SEMICONDUCTOR
|
Part Package Code |
TO-261AA
|
SOT-223 (TO-261) 4 LEAD
|
Package Description |
LEAD FREE, CASE 318E-04, TO-261, 4 PIN
|
CASE 318E-04, TO-261, 4 PIN
|
Pin Count |
4
|
4
|
Manufacturer Package Code |
CASE 318E-04
|
0.0318
|
Reach Compliance Code |
unknown
|
not_compliant
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
300 mJ
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE AND RESISTOR
|
|
DS Breakdown Voltage-Min |
42 V
|
|
Drain Current-Max (ID) |
6 A
|
|
Drain-source On Resistance-Max |
0.12 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code |
TO-261AA
|
|
JESD-30 Code |
R-PDSO-G4
|
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
NOT SPECIFIED
|
|
Number of Elements |
1
|
|
Number of Terminals |
4
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel) |
260
|
235
|
Polarity/Channel Type |
N-CHANNEL
|
|
Pulsed Drain Current-Max (IDM) |
9 A
|
|
Qualification Status |
COMMERCIAL
|
|
Surface Mount |
YES
|
|
Terminal Finish |
MATTE TIN
|
TIN LEAD
|
Terminal Form |
GULL WING
|
|
Terminal Position |
DUAL
|
|
Time@Peak Reflow Temperature-Max (s) |
40
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
2
|
1
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8542.39.00.01
|
Samacsys Manufacturer |
|
onsemi
|
Interface IC Type |
|
BUFFER OR INVERTER BASED PERIPHERAL DRIVER
|
|
|
|
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