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NE425S01-T1 vs NE425S01-T1B feature comparison

NE425S01-T1 NEC Compound Semiconductor Devices Ltd

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NE425S01-T1B NEC Electronics Group

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NEC COMPOUND SEMICONDUCTOR DEVICES LTD NEC ELECTRONICS CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOW NOISE LOW NOISE, HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE SINGLE
DS Breakdown Voltage-Min 3 V 4 V
Drain Current-Max (ID) 0.02 A 0.02 A
FET Technology HETERO-JUNCTION HETERO-JUNCTION
Highest Frequency Band KU BAND KU BAND
JESD-30 Code X-PXMW-G4 O-PRDB-G4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode DEPLETION MODE DEPLETION MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape UNSPECIFIED ROUND
Package Style MICROWAVE DISK BUTTON
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Gain-Min (Gp) 10.5 dB 10.5 dB
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position UNSPECIFIED RADIAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE SILICON
Base Number Matches 2 1
Transistors » RF Small Signal Field-Effect Transistors
Transistors » RF Small Signal Field-Effect Transistors

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