NE425S01-T1B
vs
NE722S01
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
NEC ELECTRONICS CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOW NOISE
Case Connection
SOURCE
Configuration
SINGLE
SINGLE
DS Breakdown Voltage-Min
3 V
4 V
Drain Current-Max (ID)
0.02 A
0.04 A
FET Technology
HETERO-JUNCTION
METAL SEMICONDUCTOR
Highest Frequency Band
KU BAND
X BAND
JESD-30 Code
X-PXMW-G4
X-PXMW-G4
Number of Elements
1
1
Number of Terminals
4
4
Operating Mode
DEPLETION MODE
DEPLETION MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
UNSPECIFIED
UNSPECIFIED
Package Style
MICROWAVE
MICROWAVE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Gain-Min (Gp)
10.5 dB
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
UNSPECIFIED
UNSPECIFIED
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
GALLIUM ARSENIDE
GALLIUM ARSENIDE
Base Number Matches
3
2
Package Description
MICROWAVE, X-PXMW-G4
Pin Count
4
Compare NE425S01-T1B with alternatives
Compare NE722S01 with alternatives