NE32584C-S
vs
NE32584C-S
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
|
CALIFORNIA EASTERN LABORATORIES
|
Package Description |
METAL CERAMIC, 84C, 4 PIN
|
DISK BUTTON, O-CRDB-F4
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW NOISE, HIGH RELIABILITY
|
LOW NOISE
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
4 V
|
4 V
|
FET Technology |
HETERO-JUNCTION
|
HETERO-JUNCTION
|
Highest Frequency Band |
X BAND
|
X BAND
|
JESD-30 Code |
O-CRDB-F4
|
O-CRDB-F4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
DISK BUTTON
|
DISK BUTTON
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Gain-Min (Gp) |
11 dB
|
11 dB
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
RADIAL
|
RADIAL
|
Transistor Element Material |
SILICON
|
GALLIUM ARSENIDE
|
Base Number Matches |
2
|
2
|
Drain Current-Max (ID) |
|
0.09 A
|
Operating Temperature-Max |
|
150 °C
|
Transistor Application |
|
AMPLIFIER
|
|
|
|
Compare NE32584C-S with alternatives
Compare NE32584C-S with alternatives