NDS9945X
vs
IRF7103
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
INTERNATIONAL RECTIFIER CORP
Package Description
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
50 V
Drain Current-Max (ID)
3.5 A
3 A
Drain-source On Resistance-Max
0.1 Ω
0.13 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
10 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
90 ns
Turn-on Time-Max (ton)
55 ns
Base Number Matches
1
2
Rohs Code
HTS Code
8541.29.00.95
Additional Feature
LOGIC LEVEL COMPATIBLE
JESD-609 Code
e0
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
245
Power Dissipation Ambient-Max
2 W
Power Dissipation-Max (Abs)
2 W
Terminal Finish
TIN LEAD
Time@Peak Reflow Temperature-Max (s)
30
Compare NDS9945X with alternatives
Compare IRF7103 with alternatives