IRF7103 vs BSO615NGXT feature comparison

IRF7103 International Rectifier

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BSO615NGXT Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V 60 V
Drain Current-Max (ID) 3 A 2.6 A
Drain-source On Resistance-Max 0.13 Ω 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e0 e3
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 2 W
Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pbfree Code Yes
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Avalanche Energy Rating (Eas) 60 mJ
Pulsed Drain Current-Max (IDM) 10.4 A

Compare IRF7103 with alternatives

Compare BSO615NGXT with alternatives