NDS8410A_NL
vs
FDS6690A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
ONSEMI
Part Package Code
SOT
SOIC-8
Package Description
SMALL OUTLINE, R-PDSO-G8
SOP-8
Pin Count
8
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
10.8 A
11 A
Drain-source On Resistance-Max
0.012 Ω
0.0125 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
2.5 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
3
Pbfree Code
Manufacturer Package Code
751EB
HTS Code
8541.29.00.95
Factory Lead Time
11 Weeks
Samacsys Manufacturer
onsemi
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
96 mJ
Feedback Cap-Max (Crss)
115 pF
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
1 W
Pulsed Drain Current-Max (IDM)
50 A
Time@Peak Reflow Temperature-Max (s)
30
Turn-off Time-Max (toff)
63 ns
Turn-on Time-Max (ton)
29 ns
Compare NDS8410A_NL with alternatives
Compare FDS6690A with alternatives