NDS8410/S62Z
vs
JANTX2N5545
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
TEMIC SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Configuration
SINGLE WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
10 A
Drain-source On Resistance-Max
0.015 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JUNCTION
JESD-30 Code
R-PDSO-G8
O-MBCY-W6
Number of Elements
1
2
Number of Terminals
8
6
Operating Mode
ENHANCEMENT MODE
DEPLETION MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
METAL
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
CYLINDRICAL
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
1 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Form
GULL WING
WIRE
Terminal Position
DUAL
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
3
Additional Feature
LOW NOISE
Feedback Cap-Max (Crss)
2 pF
JEDEC-95 Code
TO-71
Reference Standard
MIL
Terminal Finish
NOT SPECIFIED
Compare NDS8410/S62Z with alternatives
Compare JANTX2N5545 with alternatives