NDB706AL vs IXFH12N100F feature comparison

NDB706AL National Semiconductor Corporation

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IXFH12N100F IXYS Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP IXYS CORP
Package Description SMALL OUTLINE, R-PSSO-G2 PLASTIC PACKAGE-3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE AVALANCHE RATED
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 1000 V
Drain Current-Max (ID) 75 A 12 A
Drain-source On Resistance-Max 0.015 Ω 1.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 800 pF
JEDEC-95 Code TO-263AB TO-247
JESD-30 Code R-PSSO-G2 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 150 W
Pulsed Drain Current-Max (IDM) 225 A 48 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 550 ns
Turn-on Time-Max (ton) 640 ns
Base Number Matches 2 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code TO-247
Pin Count 3
Avalanche Energy Rating (Eas) 1000 mJ
JESD-609 Code e3
Peak Reflow Temperature (Cel) 260
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

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Compare IXFH12N100F with alternatives