NDB705BEL vs STD5NE10T4 feature comparison

NDB705BEL Texas Instruments

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STD5NE10T4 STMicroelectronics

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP STMICROELECTRONICS
Package Description SMALL OUTLINE, R-PSSO-G2 DPAK-3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE AVALANCHE RATED
Case Connection DRAIN DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V 100 V
Drain Current-Max (ID) 70 A 5 A
Drain-source On Resistance-Max 0.018 Ω 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 150 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Rohs Code Yes
Part Package Code TO-252AA
Pin Count 3
Avalanche Energy Rating (Eas) 25 mJ
JESD-609 Code e0
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 20 A
Terminal Finish TIN LEAD
Transistor Application SWITCHING

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