NAND01GR4B3BV6
vs
MBM29DL640E90TN
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
STMICROELECTRONICS
|
FUJITSU SEMICONDUCTOR AMERICA INC
|
Part Package Code |
SOIC
|
TSOP1
|
Package Description |
VSSOP,
|
PLASTIC, TSOP1-48
|
Pin Count |
48
|
48
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
35 ns
|
90 ns
|
JESD-30 Code |
R-PDSO-G48
|
R-PDSO-G48
|
JESD-609 Code |
e0
|
|
Length |
15.4 mm
|
18.4 mm
|
Memory Density |
1073741824 bit
|
67108864 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
2
|
Number of Terminals |
48
|
48
|
Number of Words |
67108864 words
|
4194304 words
|
Number of Words Code |
64000000
|
4000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
85 °C
|
Operating Temperature-Min |
-40 °C
|
-40 °C
|
Organization |
64MX16
|
4MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
VSSOP
|
TSOP1
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
|
SMALL OUTLINE, THIN PROFILE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Programming Voltage |
1.8 V
|
3 V
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
0.65 mm
|
1.2 mm
|
Supply Voltage-Max (Vsup) |
1.95 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
1.7 V
|
2.7 V
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Pitch |
0.5 mm
|
0.5 mm
|
Terminal Position |
DUAL
|
DUAL
|
Width |
12 mm
|
12 mm
|
Base Number Matches |
4
|
1
|
Alternate Memory Width |
|
8
|
Type |
|
NOR TYPE
|
|
|
|
Compare NAND01GR4B3BV6 with alternatives
Compare MBM29DL640E90TN with alternatives