NAND01GR4B3BV6 vs MBM29DL640E90TN feature comparison

NAND01GR4B3BV6 STMicroelectronics

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MBM29DL640E90TN FUJITSU Semiconductor Limited

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer STMICROELECTRONICS FUJITSU SEMICONDUCTOR AMERICA INC
Part Package Code SOIC TSOP1
Package Description VSSOP, PLASTIC, TSOP1-48
Pin Count 48 48
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 35 ns 90 ns
JESD-30 Code R-PDSO-G48 R-PDSO-G48
JESD-609 Code e0
Length 15.4 mm 18.4 mm
Memory Density 1073741824 bit 67108864 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 2
Number of Terminals 48 48
Number of Words 67108864 words 4194304 words
Number of Words Code 64000000 4000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 64MX16 4MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code VSSOP TSOP1
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 1.8 V 3 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 0.65 mm 1.2 mm
Supply Voltage-Max (Vsup) 1.95 V 3.6 V
Supply Voltage-Min (Vsup) 1.7 V 2.7 V
Supply Voltage-Nom (Vsup) 1.8 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Pitch 0.5 mm 0.5 mm
Terminal Position DUAL DUAL
Width 12 mm 12 mm
Base Number Matches 4 1
Alternate Memory Width 8
Type NOR TYPE

Compare NAND01GR4B3BV6 with alternatives

Compare MBM29DL640E90TN with alternatives