N82S226F vs N82S126F feature comparison

N82S226F Philips Semiconductors

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N82S126F Philips Semiconductors

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SIGNETICS CORP PHILIPS SEMICONDUCTORS
Package Description , DIP, DIP16,.3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Access Time-Max 50 ns 50 ns
JESD-30 Code R-GDIP-T16 R-XDIP-T16
Memory Density 1024 bit 1024 bit
Memory IC Type OTP ROM OTP ROM
Memory Width 4 4
Number of Functions 1
Number of Terminals 16 16
Number of Words 256 words 256 words
Number of Words Code 256 256
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 75 °C 70 °C
Operating Temperature-Min
Organization 256X4 256X4
Output Characteristics OPEN-COLLECTOR
Package Body Material CERAMIC, GLASS-SEALED CERAMIC
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 5.25 V
Supply Voltage-Min (Vsup) 4.75 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology BIPOLAR TTL
Temperature Grade COMMERCIAL EXTENDED COMMERCIAL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 3 3
Rohs Code No
JESD-609 Code e0
Package Code DIP
Package Equivalence Code DIP16,.3
Supply Current-Max 0.12 mA
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Pitch 2.54 mm

Compare N82S226F with alternatives

Compare N82S126F with alternatives