MXSMCJLCE10E3/TR vs MSMCGLCE10AE3TR feature comparison

MXSMCJLCE10E3/TR Microsemi Corporation

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MSMCGLCE10AE3TR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-G2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 HIGH RELIABILITY
Breakdown Voltage-Max 13.6 V 12.3 V
Breakdown Voltage-Min 11.1 V 11.1 V
Breakdown Voltage-Nom 12.35 V 11.7 V
Clamping Voltage-Max 18.8 V 17 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-215AB
JESD-30 Code R-PDSO-C2 R-PDSO-G2
JESD-609 Code e3
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 IEC-61000-4-2, 4-4, 4-5
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form C BEND GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 1
Part Package Code DO-215AB
Pin Count 2
Diode Capacitance-Min 100 pF
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 5 µA
Reverse Test Voltage 10 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MXSMCJLCE10E3/TR with alternatives

Compare MSMCGLCE10AE3TR with alternatives