MXSMCJLCE10E3/TR vs MXSMCJLCE10/TR feature comparison

MXSMCJLCE10E3/TR Microsemi Corporation

Buy Now Datasheet

MXSMCJLCE10/TR Microsemi Corporation

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature TR, 7 INCH: 750 TR, 7 INCH: 750
Breakdown Voltage-Max 13.6 V 13.6 V
Breakdown Voltage-Min 11.1 V 11.1 V
Breakdown Voltage-Nom 12.35 V 12.35 V
Clamping Voltage-Max 18.8 V 18.8 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AB DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 MIL-19500
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 1
Moisture Sensitivity Level 1

Compare MXSMCJLCE10E3/TR with alternatives

Compare MXSMCJLCE10/TR with alternatives