MXSMAJP4KE11AE3 vs NTE4929 feature comparison

MXSMAJP4KE11AE3 Microsemi Corporation

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NTE4929 NTE Electronics Inc

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP NTE ELECTRONICS INC
Part Package Code DO-214AC
Package Description R-PDSO-C2 O-PALF-W2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 11.6 V 21 V
Breakdown Voltage-Min 10.5 V 19 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AC
JESD-30 Code R-PDSO-C2 O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 400 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.52 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 9.4 V 17.1 V
Surface Mount YES NO
Technology AVALANCHE ZENER
Terminal Finish MATTE TIN
Terminal Form C BEND WIRE
Terminal Position DUAL AXIAL
Base Number Matches 2 1
Breakdown Voltage-Nom 20 V
Case Connection ISOLATED
Clamping Voltage-Max 27.7 V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 5 µA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MXSMAJP4KE11AE3 with alternatives

Compare NTE4929 with alternatives