NTE4929 vs SMAJP4KE11AE3TR feature comparison

NTE4929 NTE Electronics Inc

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SMAJP4KE11AE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer NTE ELECTRONICS INC MICROSEMI CORP
Package Description O-PALF-W2 R-PDSO-C2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 21 V 11.6 V
Breakdown Voltage-Min 19 V 10.5 V
Breakdown Voltage-Nom 20 V
Case Connection ISOLATED
Clamping Voltage-Max 27.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 1500 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1.52 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 17.1 V 9.4 V
Reverse Current-Max 5 µA
Surface Mount NO YES
Technology ZENER AVALANCHE
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Part Package Code DO-214AC
Pin Count 2
Additional Feature TR, 7 INCH; 750
JEDEC-95 Code DO-214AC

Compare NTE4929 with alternatives

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