MXRT100KP40AE3TR
vs
RT100KP40AE3TR
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MICROSEMI CORP
MICROSEMI CORP
Package Description
O-PALF-W2
O-PALF-W2
Pin Count
2
2
Manufacturer Package Code
CASE 5A
CASE 5A
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Max
49.1 V
49.1 V
Breakdown Voltage-Min
44.4 V
44.4 V
Breakdown Voltage-Nom
46.75 V
46.75 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
78.6 V
68.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-PALF-W2
O-PALF-W2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
100000 W
100000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1.61 W
1.61 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
40 V
40 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Compare MXRT100KP40AE3TR with alternatives
Compare RT100KP40AE3TR with alternatives