MV2105
vs
1N4786
feature comparison
| Pbfree Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
INTERNATIONAL SEMICONDUCTOR INC
|
| Part Package Code |
TO-92 (TO-226) 5.33mm Body Height
|
|
| Package Description |
PLASTIC, CASE 182-06, TO-226AC, 2 PIN
|
O-LALF-W2
|
| Pin Count |
2
|
|
| Manufacturer Package Code |
182-06
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Samacsys Manufacturer |
onsemi
|
|
| Additional Feature |
HIGH Q, HIGH RELIABILITY
|
HIGH Q, LOW LEAKAGE
|
| Breakdown Voltage-Min |
30 V
|
25 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Cap Tolerance |
10%
|
20%
|
| Diode Capacitance Ratio-Min |
2.5
|
2.4
|
| Diode Capacitance-Nom |
15 pF
|
6.8 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| Frequency Band |
HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
|
| JEDEC-95 Code |
TO-92
|
DO-7
|
| JESD-30 Code |
O-PBCY-T2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
235
|
|
| Power Dissipation-Max |
0.28 W
|
0.4 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Quality Factor-Min |
400
|
15
|
| Rep Pk Reverse Voltage-Max |
30 V
|
25 V
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
WIRE
|
| Terminal Position |
BOTTOM
|
AXIAL
|
| Variable Capacitance Diode Classification |
ABRUPT
|
ABRUPT
|
| Base Number Matches |
9
|
5
|
| Case Connection |
|
ISOLATED
|
|
|
|
Compare MV2105 with alternatives
Compare 1N4786 with alternatives