MV1N8182US vs MS1N8182 feature comparison

MV1N8182US Microchip Technology Inc

Buy Now Datasheet

MS1N8182 Microchip Technology Inc

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Package Description MELF-2
Reach Compliance Code compliant compliant
Factory Lead Time 25 Weeks 32 Weeks
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Min 190 V 190 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 294 V 294 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 150 W 150 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Reference Standard IEC-61000-4-2, 4-4; MIL-19500 IEC-61000-4-2,4-4,4-5
Rep Pk Reverse Voltage-Max 170 V 170 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Form WRAP AROUND WIRE
Terminal Position END AXIAL
Base Number Matches 1 2
Reverse Current-Max 0.5 µA

Compare MV1N8182US with alternatives

Compare MS1N8182 with alternatives