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MV1N8182US vs MX1N8182 feature comparison

MV1N8182US Microsemi Corporation

Buy Now Datasheet

MX1N8182 Microsemi Corporation

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description MELF-2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 190 V 190 V
Clamping Voltage-Max 294 V 294 V
Configuration SINGLE SINGLE
Diode Capacitance-Min 4 pF
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 150 W 150 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Rep Pk Reverse Voltage-Max 170 V 170 V
Reverse Current-Max 0.5 µA 0.5 µA
Reverse Test Voltage 170 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Form WRAP AROUND WIRE
Terminal Position END AXIAL
Base Number Matches 2 2
Additional Feature HIGH RELIABILITY
Case Connection ISOLATED
Reference Standard IEC-61000-4-2,4-4,4-5
Diodes » Transient Suppressors
Diodes » Transient Suppressors