MV1N6279E3TR vs MSPSMAJP4KE200CATR feature comparison

MV1N6279E3TR Microsemi Corporation

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MSPSMAJP4KE200CATR Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description O-PALF-W2 R-PDSO-C2
Pin Count 2 2
Manufacturer Package Code CASE 1
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 24.2 V 210 V
Breakdown Voltage-Min 19.8 V 190 V
Breakdown Voltage-Nom 22 V
Case Connection ISOLATED
Clamping Voltage-Max 31.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 R-PDSO-C2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 1500 W 400 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity UNIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1.52 W 1.52 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 17.8 V 171 V
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN TIN LEAD
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 1 1
Pbfree Code No
Part Package Code DO-214BA
Additional Feature TR, 7 INCH: 750
JEDEC-95 Code DO-214AC

Compare MV1N6279E3TR with alternatives

Compare MSPSMAJP4KE200CATR with alternatives