MV1N6279E3TR vs 1N6279ARL4G feature comparison

MV1N6279E3TR Microsemi Corporation

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1N6279ARL4G onsemi

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MICROSEMI CORP ON SEMICONDUCTOR
Package Description O-PALF-W2 O-PALF-W2
Pin Count 2 2
Manufacturer Package Code CASE 1 CASE 41A-04
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 24.2 V 23.1 V
Breakdown Voltage-Min 19.8 V 20.9 V
Breakdown Voltage-Nom 22 V 22 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 31.9 V 30.6 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.52 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 17.8 V 18.8 V
Surface Mount NO NO
Technology AVALANCHE ZENER
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Pbfree Code Yes
Additional Feature EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE
Reference Standard UL RECOGNIZED

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Compare 1N6279ARL4G with alternatives