MV1638
vs
V33
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MSI ELECTRONICS INC
KNOX SEMICONDUCTORS INC
Package Description
O-LALF-W2
O-LALF-W2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
20 V
22 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Cap Tolerance
10%
20%
Diode Capacitance Ratio-Min
2
4.1
Diode Capacitance-Nom
33 pF
33 pF
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 Code
O-LALF-W2
O-LALF-W2
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.4 W
0.4 W
Qualification Status
Not Qualified
Not Qualified
Quality Factor-Min
200
7
Rep Pk Reverse Voltage-Max
20 V
22 V
Reverse Current-Max
1e-7 µA
1e-7 µA
Reverse Test Voltage
15 V
20 V
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Variable Capacitance Diode Classification
ABRUPT
ABRUPT
Base Number Matches
13
2
Rohs Code
No
Part Package Code
DO-7
Pin Count
2
Additional Feature
LOW LEAKAGE
JESD-609 Code
e0
Operating Temperature-Min
-65 °C
Terminal Finish
Tin/Lead (Sn/Pb)
Compare MV1638 with alternatives
Compare V33 with alternatives