MUPTB5E3
vs
MVUPTB5TR7E3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROSEMI CORP
|
| Reach Compliance Code |
compliant
|
unknown
|
| Factory Lead Time |
40 Weeks
|
|
| Samacsys Manufacturer |
Microchip
|
|
| Additional Feature |
HIGH RELIABILITY, MIL-STD-750
|
LOW LEAKAGE CURRENT
|
| Breakdown Voltage-Min |
6 V
|
6 V
|
| Clamping Voltage-Max |
9.5 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-216AA
|
DO-216AA
|
| JESD-30 Code |
S-PSSO-G1
|
R-PSSO-G1
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Peak Rev Power Dis-Max |
1000 W
|
100 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
2.5 W
|
2.5 W
|
| Reference Standard |
AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-PRF-19500
|
|
| Rep Pk Reverse Voltage-Max |
5 V
|
5 V
|
| Reverse Current-Max |
50 µA
|
|
| Reverse Test Voltage |
5 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Base Number Matches |
2
|
1
|
| Part Package Code |
|
DO-216AA
|
| Package Description |
|
R-PSSO-G1
|
| Pin Count |
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Case Connection |
|
CATHODE
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare MUPTB5E3 with alternatives
Compare MVUPTB5TR7E3 with alternatives