MUN5335DW1T1
vs
MUN5335DW1T1
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
ON SEMICONDUCTOR
MOTOROLA INC
Package Description
CASE 419B-02, 6 PIN
SMALL OUTLINE, R-PDSO-G6
Pin Count
6
Manufacturer Package Code
CASE 419B-02
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
BUILT-IN BIAS RESISTOR RATIO 21.36
BUILT-IN BIAS RESISTOR RATIO IS 21.4
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
80
80
JESD-30 Code
R-PDSO-G6
R-PDSO-G6
JESD-609 Code
e0
e0
Moisture Sensitivity Level
1
Number of Elements
2
2
Number of Terminals
6
6
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN AND PNP
NPN AND PNP
Power Dissipation-Max (Abs)
0.15 W
0.15 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
1
HTS Code
8541.21.00.95
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
0.15 W
Compare MUN5335DW1T1 with alternatives
Compare MUN5335DW1T1 with alternatives