MUN5335DW1T1 vs MUN5331DW1T1 feature comparison

MUN5335DW1T1 Motorola Mobility LLC

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MUN5331DW1T1 Motorola Semiconductor Products

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MOTOROLA INC MOTOROLA INC
Package Description SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95 8541.21.00.95
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21.4 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 8
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e0 e0
Number of Elements 2 2
Number of Terminals 6 6
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN AND PNP NPN AND PNP
Power Dissipation Ambient-Max 0.15 W 0.15 W
Power Dissipation-Max (Abs) 0.15 W 0.15 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 6 5
Rohs Code No
VCEsat-Max 0.25 V

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