MUN5111T1
vs
MUN5114T1
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
MOTOROLA INC
|
Package Description |
,
|
SMALL OUTLINE, R-PDSO-G3
|
Reach Compliance Code |
unknown
|
unknown
|
Collector Current-Max (IC) |
0.05 A
|
0.1 A
|
DC Current Gain-Min (hFE) |
35
|
80
|
Number of Elements |
1
|
1
|
Polarity/Channel Type |
PNP
|
PNP
|
Power Dissipation-Max (Abs) |
0.15 W
|
|
Surface Mount |
YES
|
YES
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
5
|
5
|
Part Package Code |
|
SC-70
|
Pin Count |
|
3
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.21.00.95
|
Additional Feature |
|
BUILT IN BIAS RESISTOR RATIO 4.7
|
Collector-Emitter Voltage-Max |
|
50 V
|
Configuration |
|
SINGLE WITH BUILT-IN RESISTOR
|
JESD-30 Code |
|
R-PDSO-G3
|
JESD-609 Code |
|
e0
|
Number of Terminals |
|
3
|
Operating Temperature-Max |
|
150 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Power Dissipation Ambient-Max |
|
0.15 W
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
DUAL
|
Transistor Application |
|
SWITCHING
|
VCEsat-Max |
|
0.25 V
|
|
|
|
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