MUN2130T1 vs DTB113E feature comparison

MUN2130T1 Motorola Mobility LLC

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DTB113E onsemi

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MOTOROLA INC ONSEMI
Package Description SMALL OUTLINE, R-PDSO-G3 CASE 29-11, TO-226, 3 PIN
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 3 3
JESD-30 Code R-PDSO-G3 O-PBCY-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Polarity/Channel Type PNP PNP
Power Dissipation Ambient-Max 0.2 W
Power Dissipation-Max (Abs) 0.2 W 0.35 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 4
Rohs Code No
Part Package Code TO-92
Pin Count 3
Manufacturer Package Code CASE 29-11
Factory Lead Time 4 Weeks
JEDEC-95 Code TO-92
Peak Reflow Temperature (Cel) 235

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